rfRXD0420/0920
3.2.2.1
DYNAMIC REFERENCE VOLTAGE
Selection of component values for R1 and C2 is an
A dynamic reference voltage can be derived by averag-
ing the received signal with a low-pass filter. The exam-
ple ASK application circuit shown in Figure 3-9, the
low-pass filter is formed by R1 and C2. The output of
the low-pass filter is then fed to OPA-.
The setting of the R1-C2 time constant depends on the
ratio of logical ones versus zeros and a trade off in
stability versus receiver reaction time. If the received
signal has an even number of logical ones versus
zeros, the time constant can be set relatively short.
Thus the reference voltage can react quickly to
changes in the received signal amplitude and differ-
ences in transmitters. However, it may not be as stable
and can fluctuate with the ratio of logical ones and
iterative process. First start with a time constant
between 10 to 100 times the signal rate. Second, view
the reference voltage against the RSSI signal to
determine if the values are suitable. Figure 3-12 is an
oscilloscope screen capture of an incoming RF square
wave modulated signal (ASK on-off keying). The top
trace is the data output of OPA (Pin 18). The two
bottom traces are the RSSI signal (Pin 21, bottom
square wave) and generated reference voltage (Pin 19,
bottom trace centered in the RSSI square wave). The
goal is to select values for R1 and C2 such that the
reference voltage is in the middle of the RSSI signal.
This reference voltage level provides the optimum data
comparison of the incoming data signal.
zeros. If the time constant is set long, the reference
3.2.2.2
STATIC REFERENCE VOLTAGE
voltage will be more stable. However, the receiver
cannot react as quickly upon the reception of a
received signal.
A static reference voltage can be derived by a voltage
divider network.
FIGURE 3-12:
RSSI AND REFERENCE VOLTAGE COMPARISON
OPA
(Pin 18)
RSSI
OPA-
(Pin 19)
(Pin 21)
DS70090A-page 16
Preliminary
? 2003 Microchip Technology Inc.
相关PDF资料
RHK005N03T146 MOSFET N-CH 30V 500MA SOT-346
RHP020N06T100 MOSFET N-CH 60V 2A SOT-89
RHP030N03T100 MOSFET N-CH 30V 3A SOT-89
RI-TRP-WEHP-30 RFID GLASS TRANSP R/W 80BIT 23MM
RJ45-XLRM CONVERTER LEAD RJ45-XLR MALE
RJK005N03T146 MOSFET N-CH 30V 500MA SOT-346
RJK0230DPA-00#J5A MOSFET DL N-CH 25V 20A WPAK
RJK0353DSP-00#J0 MOSFET N-CH 30V 18A 8-SOP
相关代理商/技术参数
RFRXD0920T-I/LQ 功能描述:射频收发器 32 LD 800-930 MHz RF RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
RFS04ZG-M6 制造商:Power-One 功能描述:
RFS04ZG-M6G 制造商:Power-One 功能描述:RFS Series 20 W Single Output 5 V DC/DC Converter Power Supply - Surface Mount
RFS062PJ150CS 功能描述:RES ARRAY 2 RES 15 OHM 0603 制造商:samsung electro-mechanics 系列:RFS 包装:剪切带(CT) 零件状态:在售 电路类型:隔离 电阻(欧姆):15 容差:±5% 电阻器数:2 引脚数:4 每元件功率:31.25mW 温度系数:±200ppm/°C 工作温度:-55°C ~ 125°C 应用:- 安装类型:表面贴装 封装/外壳:0302(0805 公制),长边端子 供应商器件封装:603 大小/尺寸:0.032" 长 x 0.024" 宽(0.80mm x 0.60mm) 高度 - 安装(最大值):0.013"(0.33mm) 标准包装:1
RFS062PJ220CS 功能描述:RES ARRAY 2 RES 22 OHM 0603 制造商:samsung electro-mechanics 系列:RFS 包装:剪切带(CT) 零件状态:在售 电路类型:隔离 电阻(欧姆):22 容差:±5% 电阻器数:2 引脚数:4 每元件功率:31.25mW 温度系数:±200ppm/°C 工作温度:-55°C ~ 125°C 应用:- 安装类型:表面贴装 封装/外壳:0302(0805 公制),长边端子 供应商器件封装:603 大小/尺寸:0.032" 长 x 0.024" 宽(0.80mm x 0.60mm) 高度 - 安装(最大值):0.013"(0.33mm) 标准包装:1
RFS062PJ240CS 功能描述:RES ARRAY 2 RES 24 OHM 0603 制造商:samsung electro-mechanics 系列:RFS 包装:剪切带(CT) 零件状态:在售 电路类型:隔离 电阻(欧姆):24 容差:±5% 电阻器数:2 引脚数:4 每元件功率:31.25mW 温度系数:±200ppm/°C 工作温度:-55°C ~ 125°C 应用:- 安装类型:表面贴装 封装/外壳:0302(0805 公制),长边端子 供应商器件封装:603 大小/尺寸:0.032" 长 x 0.024" 宽(0.80mm x 0.60mm) 高度 - 安装(最大值):0.013"(0.33mm) 标准包装:1
RFS062PJ270CS 功能描述:RES ARRAY 2 RES 27 OHM 0603 制造商:samsung electro-mechanics 系列:RFS 包装:剪切带(CT) 零件状态:在售 电路类型:隔离 电阻(欧姆):27 容差:±5% 电阻器数:2 引脚数:4 每元件功率:31.25mW 温度系数:±200ppm/°C 工作温度:-55°C ~ 125°C 应用:- 安装类型:表面贴装 封装/外壳:0302(0805 公制),长边端子 供应商器件封装:603 大小/尺寸:0.032" 长 x 0.024" 宽(0.80mm x 0.60mm) 高度 - 安装(最大值):0.013"(0.33mm) 标准包装:1
RFS062PJ300CS 制造商:Samsung Electro-Mechanics 功能描述:- Tape and Reel